AG Dähne: Experimentalphysik / Festkörper-Nanoskopie

Publikationen der AG Dähne

2020 - ...

Phthalocyanine thin films on Si(111), M. Franz, Inorganica Chimica Acta 559, 121771 (2024).

N-Heterocyclic olefins on a silicon surface, M. Das, C. Hogan, R. Zielinski, M. Kubicki, M. Koy, C. Kosbab, S. Brozzesi, A. Das, M.T. Nehring, V. Balfanz, J. Brühne, M. Dähne, M. Franz, N. Esser, and F. Glorius, Angewandte Chemie International Edition 2023, e202314663 (accepted article).

Influence of the defect density on the ordering of an NHC monolayer on a silicon surface, R. Zielinski, M. Das, C. Kosbab, M.T. Nehring, M. Dähne, N. Esser, M. Franz, and F. Glorius, Journal of Materials Chemistry C 11, 7377 (2023).

Morphologic and electronic changes induced by thermally supported hydrogen cleaning of GaAs(110) facets, D.S. Rosenzweig, M. Schnedler, R.E. Dunin-Borkowski, Ph. Ebert, and H. Eisele, Journal of Vacuum Science and Technology B 41, 044202 (2023).

Self-organized formation of unidirectional and quasi one-dimensional metallic Tb silicide nanowires on Si(110), S. Appelfeller, M. Franz, M. Karadag, M. Kubicki, R. Zielinski, M. Krivenkov, A. Varykhalov, A. Preobrajenski, and M. Dähne, Applied Surface Science 607, 154875 (2023).

Atomically resolved study of initial stages of hydrogen etching and adsorption on GaAs(110), D.S. Rosenzweig, M.N.L. Hansemann, M. Schnedler, Ph. Ebert, and H. Eisele, Physical Review Materials 6, 124603 (2022).

Electronic structure of the Si(111)√3x√3R30°-B surface from theory and photo­emission spectroscopy, H. Aldahhak, C. Hogan, S. Lindner, S. Appelfeller, H. Eisele, W.G. Schmidt, M. Dähne, U. Gerstmann, and M. Franz, Physical Review B 103, 035303 (2021).

From surface data to bulk properties: a case study for antiphase boundaries in GaP on Si(001), P. Farin, H. Eisele, M. Dähne, and A. Lenz, Journal of Physics D: Applied Physics 54, 205302 (2021).

Controlled growth of ordered monolayers of N-heterocyclic carbenes on silicon, M. Franz, S. Chandola, M. Koy, R. Zielinski, H. Aldahhak, M. Das, M. Freitag, U. Gerstmann, D. Liebig, A.K. Hoffmann, M. Rosin, W.G. Schmidt, C. Hogan, F. Glorius, N. Esser, and M. Dähne, Nature Chemistry 13, 828 (2021).

Growth of ordered two-dimensional cobalt phthalocyanine films on a one-dimensional substrate, M. Kubicki, S. Lindner-Franz, M. Dähne, and M. Franz, Applied Physics Letters 119, 133105 (2021).

Optimization of the in-situ cleavage process for III-V/Si(001) investigations by cross-sectional scanning tunneling microscopy, P. Farin, U. Gernert, and A. Lenz, Journal of Applied Physics 129, 155301 (2021).

Internal atomic structure of rare earth silicide nanowires on Si(001) capped by silicon, J. Heggemann, S. Appelfeller, T. Niermann, M. Lehmann, and M. Dähne, Surface Science 696, 121563 (2020).

Submonolayer quantum dots, N. Owschimikow, B. Herzog, B. Lingnau, K. Lüdge, A. Lenz, H. Eisele, M. Dähne, T. Niermann, M. Lehmann, A. Schliwa, A. Strittmatter, and U.W. Pohl, in: Semiconductor Nanophotonics: Materials, Models, Devices (Springer-Verlag 2020), p. 13.

Adsorption behavior of cobalt phthalocyanine submonolayer coverages on B-Si(111)-√3×√3R30°, M. Kubicki, S. Lindner, M. Franz, H. Eisele, and M. Dähne, Journal of Vacuum Science and Technology B 38, 042803 (2020).

Continuous crossover from two-dimensional to one-dimensional electronic properties for metallic silicide nanowires, S. Appelfeller, K. Holtgrewe, M. Franz, L. Freter, C. Hassenstein, H.-F. Jirschik, S. Sanna, and M. Dähne, Physical Review B 102, 115433 (2020).

Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions, L. Freter, Y. Wang, M. Schnedler, J.-F. Carlin, R. Butté, N. Grandjean, H. Eisele, R.E. Dunin-Borkowski, and Ph. Ebert, Journal of Applied Physics 128, 185701 (2020).

Interplay of anomalous strain relaxation and minimization of polarization changes at nitride semiconductor heterointerfaces, Y. Wang, M. Schnedler, Q. Lan, F. Zheng, L. Freter, Y. Lu, U. Breuer, H. Eisele, J.-F. Carlin, R. Butté, N. Grandjean, R.E. Dunin-Borkowski, and Ph. Ebert, Physical Review B 102, 245304 (2020).

2015 - 2019

Fabrication of one-dimensional magic cluster arrays using a vicinal surface as a template, M. Franz, J. Schmermbeck, and M. Dähne, Applied Physics Letters 114, 093102 (2019).

Refined structure model of rare earth silicide nanowires on Si(001), S. Appelfeller, J. Heggemann, T. Niermann, M. Lehmann, and M. Dähne, Applied Physics Letters 114, 093104 (2019).

Valence band structure and effective masses of GaN(10-10), M. Franz, S. Appelfeller, H. Eisele, Ph. Ebert, and M. Dähne, Physical Review B 99, 195306 (2019).

Structure and one-dimensional metallicity of rare earth silicide nanowires on Si(001), S. Sanna, K. Holtgrewe, S. Appelfeller, M. Franz, M. Dähne, and W.G. Schmidt, Physical Review B 99, 214104 (2019).

Arrangement and electronic properties of cobalt phthalocyanine molecules on B‑Si(111)√3x√3R30°, S. Lindner, M. Franz, M. Kubicki, S. Appelfeller, M. Dähne, and H. Eisele, Physical Review B 100, 245301 (2019).

Growth and characterization of Tb silicide nanostructures on Si(hhk) substrates, S. Appelfeller, M. Franz, L. Freter, C. Hassenstein, H.-F. Jirschik, and M. Dähne, Physical Review Materials 3, 126002 (2019).

Interface of GaP/Si(001) and antiphase boundary facet-type determination, A. Lenz, O. Supplie, E. Lenz, P. Kleinschmidt, and T. Hannappel, Journal of Applied Physics 125, 045304 (2019).

Three-dimensional structure of antiphase domains in GaP on Si(001), P. Farin, M. Marquardt, W. Martyanov, J. Belz, A. Beyer, K. Volz, and A. Lenz, Journal of Physics: Condensed Matter 31, 144001 (2019).

Detailed identification of the progression of antiphase boundaries in GaP/Si(001), P. Farin, M. Marquardt, W. Martyanov, J. Belz., A. Beyer, K. Volz, and A. Lenz, Electrochemical Society Transactions 93, 93 (2019).

Composition modulation by twinning in InAsSb nanowires, M. Schnedler, T. Xu, V. Portz, J.-P. Nys, S.R. Plissard, M. Berthe, H. Eisele, R.E. Dunin-Borkowski, P. Ebert, and B. Grandidier, Nanotechnology 30, 324005 (2019).

Iuliacumite: A novel chemical short-range order in a two-dimensional wurtzite single monolayer InAs1−xSbx shell on InAs nanowires, M. Schnedler, T. Xu, I. Lefebvre, J.-P. Nys, S.R. Plissard, M. Berthe, H. Eisele, R.E. Dunin-Borkowski, Ph. Ebert, and B. Grandidier, Nano Letters 19, 8801 (2019).

Atomic scale switches based on self-assembled surface magic clusters, M. Franz, C. Panosetti, J. Große, T. Amrhein, K. Reuter, and M. Dähne, Applied Physics Letters 112, 253103 (2018).

Electron affinity and surface states of GaN m-plane facets: Implication for electronic self-passivation, V. Portz, M. Schnedler, H. Eisele, R.E. Dunin-Borkowski, and Ph. Ebert, Physical Review B 97, 115433 (2018).

Dislocation bending in GaN/step-graded (Al,Ga)N/AlN buffer layers on Si(111) investigated by STM and STEM, L. Zhang, V. Portz, M. Schnedler, L. Jin, Y. Wang, X. Hao, H. Eisele, R.E. Dunin-Borkowski, and Ph. Ebert, Philosophical Magazine 98, 3072 (2018).

Optical anisotropy of quasi-1D rare earth silicide nanostructures on Si(001), S. Chandola, E. Speiser, N. Esser, S. Appelfeller, M. Franz, and M. Dähne, Applied Surface Science 399, 648 (2017).

Fermi-level pinning and intrinsic surface states of Al1-xInxN(10-10) surfaces, V. Portz, M. Schnedler, L. Lymperakis, J. Neugebauer, H. Eisele, J.-F. Carlin, R. Butté, N. Grandjean, R.E. Dunin-Borkowski, and Ph. Ebert, Appl. Phys. Lett. 110, 022104 (2017).

Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy, F.-M. Hsiao, M. Schnedler, V. Portz, Y.-C. Huang, B.-C. Huang, M.-C. Shih, C.-W. Chang, L.-W. Tu, H. Eisele, R.E. Dunin-Borkowski, Ph. Ebert, and Y.-P. Chiu, Journal of Applied Physics 121, 015701 (2017).

Capping of rare earth silicide nanowires on Si(001), S. Appelfeller, M. Franz, M. Kubicki, P. Reiß, T. Niermann, M.A. Schubert, M. Lehmann, and M. Dähne, Applied Physics Letters 108, 013109 (2016).

Atomic size effects studied by transport in single silicide nanowires, I. Miccoli, F. Edler, H. Pfnür, S. Appelfeller, M. Dähne, K. Holtgrewe, S. Sanna, W.G. Schmidt, and C. Tegenkamp, Physical Review B 93, 125412 (2016).

Modification of the electronic properties of magic In clusters on Si(111)7x7 by different environments, M. Franz, J. Schmermbeck, and M. Dähne, Journal of Vacuum Science and Technology B 34, 04J101 (2016).

Rare-earth silicide thin films on the Si(111) surface, S. Sanna, C. Dues, W.G. Schmidt, F. Timmer, J. Wollschläger, M. Franz, S. Appelfeller, and M. Dähne, Physical Review B 93, 195407 (2016).

Growth and electronic properties of Tb silicide layers on Si(111), M. Franz, S. Appelfeller, C. Prohl, J. Große, H.-F. Jirschik, V. Füllert, C. Hassenstein, Z. Diemer, and M. Dähne, Journal of Vacuum Science and Technology A 34, 061503 (2016).

The electronic structure of Tb silicide nanowires on Si(001), S. Appelfeller, M. Franz, H.-F. Jirschik, J. Große, and M. Dähne, New Journal of Physics 18, 113005 (2016).

Strain induced quasi one-dimensional rare-earth silicide structures on Si(111), F. Timmer, R. Oelke, C. Dues, S. Sanna, W.G. Schmidt, M. Franz, S. Appelfeller, M. Dähne, and J. Wollschläger, Physical Review B 94, 205431 (2016).

Intrinsic electronic properties of high-quality wurtzite InN, H. Eisele, J. Schuppang, M. Schnedler, M. Duchamp, C. Nenstiel, V. Portz, T. Kure, M. Bügler, A. Lenz, M. Dähne, A. Hoffmann, S. Gwo, S. Choi, J.S. Speck, R.E. Dunin-Borkowski, and Ph. Ebert, Physical Review B 94, 245201 (2016).

Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate, C.S. Schulze, X. Huang, C. Prohl, V. Füllert, S. Rybank, S. Maddox, S. March, S.R. Bank, M.L. Lee, and A. Lenz, Applied Physics Letters 108, 143101 (2016).

Cross-sectional scanning tunneling microscopy of anti-phase boundaries in epitaxially grown GaP layers on Si(001), C. Prohl, H. Döscher, P. Kleinschmidt, T. Hannappel, and A. Lenz, Journal of Vacuum Science and Technology A 34, 031102 (2016).

Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs, S. Harrison, M.P. Young, P.D. Hodgson, R.J. Young, M. Hayne, L. Danos, A. Schliwa, A. Strittmatter, A. Lenz, H. Eisele, U.W. Pohl, and D. Bimberg, Physical Review B 93, 085302 (2016).

Strain and compositional fluctuations in Al0.81In0.19N/GaN heterostructures, V. Portz, M. Schnedler, M. Duchamp, F.-M. Hsiao, H. Eisele, J.-F. Carlin, R. Butté N. Grandjean, R.E. Dunin-Borkowski, and Ph. Ebert, Applied Physics Letters 109, 132102 (2016).

Lazarevicite-type short-range ordering in ternary III-V nanowires, M. Schnedler, I. Lefebvre, T. Xu, V. Portz, G. Patriarche, J.-P. Nys, S.R. Plissard, P. Caroff, M. Berthe, H. Eisele, R.E. Dunin-Borkowski, Ph. Ebert, and B. Grandidier, Physical Review B 94, 195306 (2016).

Terbium induced nanostructures on Si(111), M. Franz, J. Große, R. Kohlhaas, and M. Dähne, Surface Science 637-638, 149 (2015).

Tb silicide nanowire growth on planar and vicinal Si(001) surfaces, S. Appelfeller, S. Kuls, and M. Dähne, Surface Science 641, 180 (2015).

Polarity-dependent pinning of a surface state, M. Schnedler, V. Portz, H. Eisele, R.E. Dunin-Borkowski, and P. Ebert, Physical Review B 91, 205309 (2015).

Strong charge-carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy, D. Quandt, J.-H. Schulze, A. Schliwa, Z. Diemer, C. Prohl, A. Lenz, H. Eisele, A. Strittmatter, U.W. Pohl, M. Gschrey, S. Rodt, S. Reitzenstein, D. Bimberg, M. Lehmann, and M. Weyland, Physical Review B 91, 235418 (2015).

Tracking the subsurface path of dislocations in GaN using scanning tunneling microscopy, P. H. Weidlich, M. Schnedler, V. Portz, H. Eisele, U. Strauß, R. E. Dunin-Borkowski, and Ph. Ebert, Journal of Applied Physics 118, 035302 (2015).

2010 - 2014

Self-organized formation and XSTM-characterization of GaSb/GaAs quantum rings, A. Lenz and H. Eisele, in: Physics of quantum rings, edited by V.M. Fomin, p. 123 (Springer, Berlin 2014).

Tuning the Au-Free InSb nanocrystal morphologies grown by patterned metal-organic chemical vapor deposition, A. Lin, J.N. Shapiro, H. Eisele, and D.L. Huffaker, Advanced Functional Materials 24, 4311 (2014).

Meandering of overgrown v-shaped defects in epitaxial GaN layers, P.H. Weidlich, M. Schnedler, V. Portz, H. Eisele, R.E. Dunin-Borkowski, and P. Ebert, Applied Physics Letters 105, 012105 (2014).

Metallic rare-earth silicide nanowires on silicon surfaces, M. Dähne and M. Wanke, Journal of Physics: Condensed Matter 25, 014012 (2013).

Antimony induced cluster formation on the Si(111)7×7 surface, S. Appelfeller, M. Franz, and M. Dähne, Surface Science 608, 109 (2013).

Formation and atomic structure of self-assembled Dy silicide clusters on the Si(111)-7x7 surface, M. Franz, S. Appelfeller, M. Rychetsky, and M. Dähne, Surface Science 609, 215 (2013).

Intrinsic band gap of cleaved ZnO(11-20) surfaces, A. Sabitova, Ph. Ebert, A. Lenz, S. Schaafhausen, L. Ivanova, M. Dähne, A. Hoffmann, R.E. Dunin-Borkowski, A. Förster, B. Grandidier, and H. Eisele, Applied Physics Letters 102, 021608 (2013).

Atomic structure of tensile-strained GaAs/GaSb nanostructures, A. Lenz, E. Tournié, J. Schuppang, M. Dähne, and H. Eisele, Applied Physics Letters 102, 102105 (2013).

Spatial structure of In0.25Ga0.75As/GaAs/GaP quantum dots on the atomic scale, C. Prohl, A. Lenz, D. Roy, J. Schuppang, G. Stracke, A. Strittmatter, U.W. Pohl, D. Bimberg, H. Eisele, and M. Dähne, Applied Physics Letters 102, 123102 (2013).

Evidence of deep traps in overgrown v-shaped defects in epitaxial GaN layers, P.H. Weidlich, M. Schnedler, H. Eisele, U. Strauß, R.E. Dunin-Borkowski, and P. Ebert, Applied Physics Letters 103, 062101 (2013).

Repulsive interactions between dislocations and overgrown v-shaped defects in epitaxial GaN layers, P.H. Weidlich, M. Schnedler, H. Eisele, R.E. Dunin-Borkowski, and P. Ebert, Applied Physics Letters 103, 142105 (2013).

Hidden surface states at non-polar GaN(10-10) facets: Intrinsic pinning of nano­wires, L. Lymperakis, P.H. Weidlich, H. Eisele, M. Schnedler, J.-P. Nys, B. Grandidier, D. Stiévenard, R.E. Dunin-Borkowski, J. Neugebauer, and P. Ebert, Applied Physics Letters 103, 152101 (2013).

Critical thickness of the 2-dimensional to 3-dimensional transition in GaSb/GaAs(001) quantum dot growth, H. Eisele and M. Dähne, Journal of Crystal Growth 338, 103 (2012).

Non-polar group-III nitride semiconductor surfaces, H. Eisele and P. Ebert, Physica Status Solidi – Rapid Research Letters 6, 359 (2012).

Growth of In0.25Ga0.75As quantum dots on GaP utilizing a GaAs interlayer, G. Stracke, A. Glacki, T. Nowozin, L. Bonato, S. Rodt, C. Prohl, A. Lenz, H. Eisele, A. Schliwa, A. Strittmatter, U.W. Pohl, and D. Bimberg, Applied Physics Letters 101, 223110 (2012).

Reverse mass transport during capping of In0.5Ga0.5As quantum dots, H. Eisele, P. Ebert, N. Liu, A.L. Holmes, and C.K. Shih, Applied Physics Letters 101, 233107 (2012).

Direct measurement of the band gap and Fermi level position at InN(11-20), Ph. Ebert, S. Schaafhausen, A. Lenz, A. Sabitova, L. Ivanova, M. Dähne, Y.-L. Hong, S. Gwo, and H. Eisele, Applied Physics Letters 98, 062103 (2011).

Modelling and direct measurement of the density of states in GaAsN, M.P. Vaughan, S. Fahy, E.P. O’Reilly, L. Ivanova, H. Eisele, and M. Dähne, Physica Status Solidi (b) 248, 1167 (2011).

Electronic properties of self-assembled rare-earth silicide nanowires on Si(001), M. Wanke, K. Löser, G. Pruskil, D. Vyalikh, S.L. Molodtsov, S. Danzenbächer, C. Laubschat, and M. Dähne, Physical Review B 83, 205417 (2011).

Atomic structure and optical properties of InAs submonolayer depositions in GaAs, A. Lenz, H. Eisele, J. Becker, J.-H. Schulze, T.D. Germann, F. Luckert, K. Pötschke, E. Lenz, L. Ivanova, A. Strittmatter, U.W. Pohl, D. Bimberg, and M. Dähne, Journal of Vacuum Science and Technology B 29, 04D104 (2011).

Comment on “Structure and electronic properties of dysprosium-silicide nanowires on vicinal Si(001)” [Appl. Phys. Lett. 87, 083107 (2005)], M. Wanke and M. Dähne, Applied Physics Letters 99, 036101 (2011).

Formation of InAs/InGaAsP quantum dashes, A. Lenz,H. Eisele, F. Genz, L. Ivanova, R. Timm,D. Franke, H. Künzel, U.W. Pohl, and M. Dähne, American Institute of Physics, Conference Proceedings 1399, 249 (2011).

Atomic ordering and decomposition of lattice matched InxGa1-xAsyP1-y on InP(001), A. Lenz,H. Eisele, F. Genz, D. Franke, H. Künzel, U.W. Pohl, and M. Dähne, in: VDE proceedings, 23rd international conference on indium phosphide and related materials, p. 394 (2011).

Atomic structure of the (4x3) reconstructed InGaAs monolayer on GaAs(001), H. Eisele, B. Höpfner, C. Prohl, J. Grabowski, and M. Dähne, Surface Science 604, 283 (2010).

Effect of nitrogen on the InAs/GaAs quantum dot formation, L. Ivanova, H. Eisele, A. Lenz, R. Timm, O. Schumann, L. Geelhaar, H. Riechert, and M. Dähne, Physica Status Solidi (c) 7, 355 (2010).

InAs nanostructures on InGaAsP/InP(001): Interaction of InAs quantum dash formation with InGaAsP decomposition, F. Genz, A. Lenz,H. Eisele, L. Ivanova, R. Timm,U.W. Pohl, M. Dähne, D. Franke, and H. Künzel, Journal of Vacuum Science and Technology B 28, C5E1 (2010).

Cross-sectional scanning tunneling microscopy and spectroscopy of non-polar GaN(1-100) surfaces, H. Eisele, S. Borisova, L. Ivanova, M. Dähne, and Ph. Ebert, Journal of Vacuum Science and Technology B 28, C5G11 (2010).

Atomic structure and strain of the InAs wetting layer growing on GaAs(001), C. Prohl, B. Höpfner, J. Grabowski, M. Dähne, and H. Eisele, Journal of Vacuum Science and Technology B 28, C5E13 (2010).

Electronic properties of dysprosium silicide nanowires on Si(557), M. Wanke, M. Franz, M. Vetterlein, G. Pruskil, C. Prohl, B. Höpfner, P. Stojanov, E. Huwald, J. Riley, and M. Dähne, Journal of Applied Physics 108, 064304 (2010).

Direct measurement and analysis of the conduction band density of states in diluted GaAs1-xNx alloys, L. Ivanova, H. Eisele, M.P. Vaughan, Ph. Ebert, A. Lenz, R. Timm, O. Schumann, L. Geelhaar, M. Dähne, S. Fahy, H. Riechert, and E.P. O’Reilly, Physical Review B 82, 161201(R) (2010).

Atomic structure of buried InAs sub-monolayer depositions in GaAs, A. Lenz, H. Eisele, J. Becker, L. Ivanova, E. Lenz, F. Luckert, K. Pötschke, A. Strittmatter, U.W. Pohl, D. Bimberg, and M. Dähne, Applied Physics Express 3, 105602 (2010).

Confined states of individual type-II GaSb/GaAs quantum rings studied by cross-sectional scanning tunneling spectroscopy, R. Timm, H. Eisele, A. Lenz, L. Ivanova, V. Vossebürger, T. Warming, D. Bimberg, I. Farrer, D.A. Ritchie, and M. Dähne, Nano Letters 10, 3972 (2010).

2005 - 2009

Electronic properties of dislocations in GaN investigated by scanning tunneling microscopy, Ph. Ebert, L. Ivanova, S. Borisova, H. Eisele, A. Laubsch, and M. Dähne, Applied Physics Letters 94, 062104 (2009).

Limits of In(Ga)As/GaAs quantum dot growth, A. Lenz, H. Eisele,R. Timm,L. Ivanova,R.L. Sellin, H.-Y. Liu, M. Hopkinson, U.W. Pohl, D. Bimberg, and M. Dähne, Physica Status Solidi (b) 246, 717 (2009).

Structural and electronic properties of rare-earth silicide nanowires on Si(557), M. Wanke, K. Löser, G. Pruskil, and M. Dähne, Physical Review B 79, 155428 (2009).

Doping modulation in GaN imaged by cross-sectional scanning tunneling microscopy, H. Eisele, L. Ivanova, S. Borisova, M. Dähne, M. Winkelnkemper, and Ph. Ebert, Applied Physics Letters 94, 162110 (2009).

Contrast mechanisms in cross-sectional scanning tunneling microscopy of GaSb/GaAs type-II nanostructures, R. Timm, R.M. Feenstra, H. Eisele, A. Lenz, L. Ivanova, E. Lenz, and M. Dähne, Journal of Applied Physics 105, 093718 (2009).

Energy surfaces of rare-earth silicide films on Si(111), M. Wanke, M. Franz, M. Vetterlein, G. Pruskil, B. Höpfner, C. Prohl, I. Engelhardt, P. Stojanov, E. Huwald, J. Riley, and M. Dähne, Surface Science 603, 2808 (2009).

Formation of InAs/InGaAsP quantum dashes on InP(001), A. Lenz, F. Genz, H. Eisele, L. Ivanova, R. Timm, D. Franke, H. Künzel, U.W. Pohl, and M. Dähne, Applied Physics Letters 95, 203105 (2009).

Evolution of the InAs wetting layer on GaAs(001)c(4x4) on the atomic scale, J. Grabowski, C. Prohl, B. Höpfner, M. Dähne, and H. Eisele, Applied Physics Letters 95, 233118 (2009).

Scanning tunneling microscopy on unpinned GaN(1-100) surfaces: Invisibility of valence-band states, Ph. Ebert, L. Ivanova, and H. Eisele, Physical Review B 80, 085316 (2009).

Adsorbate-induced restructuring of Pb mesas grown on vicinal Si(111) in the quantum regime, A.A. Khajetoorians, W. Zhu, J. Kim, S. Qin, H. Eisele, Z. Zhang, and C.-K. Shih, Physical Review B 80, 245426 (2009).

Structure of InAs quantum dots-in-a-well nanostructures, A. Lenz, H. Eisele, R. Timm, L. Ivanova, H.-Y. Liu, M. Hopkinson, U.W. Pohl, and M. Dähne, Physica E 40, 1988 (2008).

Formation of dysprosium silicide nanowires on Si(557) with two-dimensional electronic structure, M. Wanke, K. Löser, G. Pruskil, and M. Dähne, Journal of Applied Physics 103, 094319 (2008).

Nitrogen-induced intermixing of InAsN quantum dots with the GaAs matrix, L. Ivanova, H. Eisele, A. Lenz, R. Timm, M. Dähne, O. Schumann, L. Geelhaar, and H. Riechert, Applied Physics Letters 92, 203101 (2008).

The atomic structure of quantum dots, Mario Dähne, Holger Eisele, and Karl Jacobi, in: Semiconductor Nanostructures, ed. by D. Bimberg, p. 123 (Springer, Berlin, Heidelberg, 2008).

Quantum ring formation and antimony segregation in GaSb/GaAs nanostructures, R. Timm,A. Lenz, H. Eisele,L. Ivanova,M. Dähne, G. Balakrishnan, D.L. Huffaker, I. Farrer, and D.A. Ritchie, Journal of Vacuum Science and Technology B 26, 1492 (2008).

Surface states and origin of the Fermi level pinning on nonpolar GaN(1-100) surfaces, L. Ivanova, S. Borisova, H. Eisele, M. Dähne, A. Laubsch, and Ph. Ebert, Applied Physics Letters 93, 192110 (2008).

Self-organized formation of GaSb/GaAs quantum rings, R. Timm, H. Eisele, A. Lenz, L. Ivanova,G. Balakrishnan, D.L. Huffaker, and M. Dähne, Physical Review Letters 101, 256101 (2008).

Change of InAs/GaAs quantum dot shape and composition during capping, H. Eisele, A. Lenz, R. Heitz, R. Timm, M. Dähne, Y. Temko, T. Suzuki, and K. Jacobi, Journal of Applied Physics 104, 124301 (2008).

Novel concepts for ultrahigh-speed quantum-dot VCSELs and edge-emitters, N.N. Ledentsov, F. Hopfer, A. Mutig, V.A. Shchukin, A.V. Sava’lev, G. Fiol, M. Kuntz, V.A. Haisler, T. Warming, E. Stock, S.S. Mikhrin, A.R. Kovsh, C. Bornholdt, A. Lenz, H. Eisele, M. Dähne, N.D. Zakharov, P. Werner, and D. Bimberg, in: Physics and simulation of optoelectronic devices XV, edited by M. Osinski, F. Henneberger, and Y. Arakawa,Proc. SPIE 6468, p. 646810 (2007).

20 Gb/s 85°C error-free operation of VCSELs based on submonolayer deposition of quantum dots, F. Hopfer, A. Mutig, G. Fiol, M. Kuntz, V.A. Shchukin, V.A. Haisler, T. Warming, E. Stock, S.S. Mikhrin, I.L. Krestnikov, D.A. Livshits, A.R. Kovsh, C. Bornholdt, A. Lenz, H. Eisele, M. Dähne, N.N. Ledentsov, and D. Bimberg, IEEE Journal of Selected Topics in Quantum Electronics 13, 1302 (2007).

Submonolayer quantum dots for high speed surface emitting lasers, N.N. Ledentsov, D. Bimberg, F. Hopfer, A. Mutig, V.A. Shchukin, A.V. Sava’lev, G. Fiol, E. Stock, H. Eisele, M. Dähne, D. Gerthsen, U. Fischer, D. Litvinov, A. Rosenauer, S.S. Mikhrin, A.R. Kovsh, N.D. Zakharov, and P. Werner, Nanoscale Research Letters 2, 417 (2007).

Erratum: “Atomically resolved structure of InAs quantum dots” [Appl. Phys. Lett. 78, 2309 (2001)], H. Eisele and K. Jacobi, Applied Physics Letters 90, 129902 (2007).

Atomic structure of thin dysprosium-silicide layers on Si(111), I. Engelhardt, C. Preinesberger, S.K. Becker, H. Eisele, and M. Dähne, Surface Science 600, 755 (2006).

Structure of InAs/GaAs quantum dots grown with Sb surfactant, R. Timm, H. Eisele, A. Lenz, T.-Y. Kim, F. Streicher, K. Pötschke, U.W. Pohl, D. Bimberg, and M. Dähne, Physica E 32, 25 (2006).

A cross-sectional scanning tunneling microscopy study of GaSb/GaAs nanostructures, R. Timm, A. Lenz, J. Grabowski, H. Eisele, and M. Dähne, Proceedings of MSM 14, ed. by A.G. Cullis and J.L. Hutchison (Springer Proceedings in Physics, Vol. 107, 2006), p. 479.

Onset of GaSb/GaAs quantum dot formation, R. Timm, A. Lenz, H. Eisele, L. Ivanova, K. Pötschke, U.W. Pohl, D. Bimberg, G. Balakrishnan, D.L. Huffaker, and M. Dähne, Physica Status Solidi (c) 3, 3971 (2006).

Structural investigation of hierarchically self-assembled GaAs/AlGaAs quantum dots, A. Lenz, R. Timm, H. Eisele, L. Ivanova, D. Martin, V. Voßebürger, A. Rastelli, O.G. Schmidt, and M. Dähne, Physica Status Solidi (b) 243, 3976 (2006).

Formation and atomic structure of GaSb nanostructures in GaAs studied by cross-sectional scanning tunneling microscopy, R. Timm, J. Grabowski, H. Eisele, A. Lenz, S.K. Becker, L. Müller-Kirsch, K. Pötschke, U.W. Pohl, D. Bimberg, and M. Dähne, Physica E 26, 231 (2005); Erratum, H. Eisele, R. Timm, and M. Dähne, Physica E 41, 1886 (2009).

Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a GaAs1-xNx capping layer, O. Schumann, S. Birner, M. Baudach, L. Geelhaar, H. Eisele, L. Ivanova, R. Timm, A. Lenz, S.K. Becker, M. Povolotskyi, M. Dähne, G. Abstreiter, and H. Riechert, Physical Review B 71, 245316 (2005).

Structure and electronic properties of dysprosium silicide nanowires on vicinal Si(001), C. Preinesberger, G. Pruskil, S.K. Becker, M. Dähne, D.V. Vyalikh, S.L. Molodtsov, C. Laubschat, and F. Schiller, Applied Physics Letters 87, 083107 (2005).

Limits of InGaAs/GaAs quantum dot growth studied by cross-sectional scanning tunneling microscopy, A. Lenz, H. Eisele, R. Timm, S.K. Becker, R.L. Sellin, U.W. Pohl, D. Bimberg, and M. Dähne, in: Proceedings of EW-MOVPE XI, ed. by E. Kapon and A. Rudra, p. 31 (Lausanne 2005).

Formation and atomic structure of GaSb quantum dots in GaAs studied by cross-sectional scanning tunneling microscopy, R. Timm, A. Lenz, J. Grabowski, H. Eisele, K. Pötschke, U.W. Pohl, D. Bimberg, and M. Dähne, in: Proceedings of EW-MOVPE XI, ed. by E. Kapon and A. Rudra, p. 39 (Lausanne 2005).

2000 - 2004

Queuing atoms: Self-assembly of silicide nanowires, C. Preinesberger, D.V. Vyalikh, S.L. Molodtsov, F. Schiller, G. Pruskil, S.K. Becker, C. Laubschat, and M. Dähne, BESSY Highlights 2003, edited by G. André, H. Henneken, and M. Sauerborn, p. 22 (2004).

Nanovoids in InGaAs/GaAs quantum dots observed by cross-sectional scanning tunneling microscopy, A. Lenz, H. Eisele, R. Timm, S.K. Becker, R.L. Sellin, U.W. Pohl, D. Bimberg, and M. Dähne, Applied Physics Letters 85, 3848 (2004).

Structure and intermixing of GaSb/GaAs quantum dots, R. Timm, H. Eisele, A. Lenz, S.K. Becker, J. Grabowski, T.-Y. Kim, L. Müller-Kirsch, K. Pötschke, U.W. Pohl, D. Bimberg, and M. Dähne, Applied Physics Letters 85, 5890 (2004).

Atomic structure of InAs and InGaAs quantum dots determined by cross-sectional scanning tunneling microscopy, H. Eisele, A. Lenz, Ch. Hennig, R. Timm, M. Ternes, and M. Dähne, Journal of Crystal Growth 248, 322 (2003).

Self-assembled structures of Dy silicides on Si(001) and Si(111) surfaces, S.K. Becker, C. Preinesberger, I. Engelhardt, M. Wanke, S. Vandré, H. Eisele, and M. Dähne, in: Proceedings of the 26th International Conference on the Physics of Semiconductors (IOP Publishing Ltd., 2003).

Photoluminescence of individual InGaAs quantum dots, K. Hodeck, J.L. Spithoven, J. Lorbacher, M. Geller, I. Manke, R. Heitz, F. Heinrichsdorff, A. Krost, D. Bimberg, and M. Dähne, Proceedings of the 26th International Conference on the Physics of Semiconductors (IOP Publishing Ltd., 2003).

Atomic structure of InAs and InGaAs quantum dots studied by cross-sectional scanning tunneling microscopy, H. Eisele, A. Lenz, R. Timm, Ch. Hennig, M. Ternes, F. Heinrichsdorff, A. Krost, R. Sellin, U.W. Pohl, D. Bimberg, T. Wehnert, E. Steimetz, W. Richter, and M. Dähne, in: Proceedings of the 26th International Conference on the Physics of Semiconductors (IOP Publishing Ltd., 2003).

Multiline photoluminescence of single InGaAs quantum dots, K. Hodeck, I. Manke, M. Geller, R. Heitz, F. Heinrichsdorff, A. Krost, D. Bimberg, H. Eisele, and M. Dähne, Physica Status Solidi (c) 0, 1209 (2003).

Segregation effects during GaAs overgrowth of InAs and InGaAs quantum dots studied by cross-sectional scanning tunneling microscopy, H. Eisele, R. Timm, A. Lenz, Ch. Hennig, M. Ternes, S.K. Becker, and M. Dähne,Physica Status Solidi (c) 0, 1129 (2003).

Room-temperature observation of standing electron waves on GaAs(110) at surface steps, O. Flebbe, H. Eisele, C. Preinesberger, R. Timm, and M. Dähne, American Institute of Physics, Conference Proceedings 696, 699 (2003).

Low-budget UHV STM built by physics students for use in a laboratory excercises course, S.K. Becker, J. Grabowski, T.-Y. Kim, L. Amsel, F. Bechtel, N. Tschirner, I. Mantouvalou, F. Streicher, A. Lenz, R. Timm, K. Hodeck, H. Eisele, and M. Dähne, American Institute of Physics, Conference Proceedings 696, 216 (2003).

An STM study of the 2x7 dysprosium-silicide nanowires superstructure on Si(001), C. Preinesberger, S.K. Becker, and M. Dähne, American Institute of Physics, Conference Proceedings 696, 837 (2003).

Structure of DySi2 nanowires on Si(001), C. Preinesberger, S.K. Becker, S. Vandré, T. Kalka, and M. Dähne, Journal of Applied Physics 91, 1695 (2002).

Cross-sectional scanning tunneling microscopy at InAs quantum dots, Mario Dähne and Holger Eisele, in: Nano-Optoelectronics, ed. by M. Grundmann, p. 117 (Springer, Berlin, 2002).

Reversed truncated cone composition distribution of In0.8Ga0.2As quantum dots overgrown by an In0.1Ga0.9As layer in a GaAs matrix, A. Lenz, R. Timm, H. Eisele, Ch. Hennig, S.K. Becker, R.L. Sellin, U.W. Pohl, D. Bimberg, and M. Dähne, Applied Physics Letters 81, 5150 (2002).

Conservation of flat-band conditions for DySi2 monolayers on n-type Si(111), S. Vandré, C. Preinesberger, W. Busse, and M. Dähne, Applied Physics Letters 78, 2012 (2001).

Lanthanide-silicide films on silicon surfaces, M. Dähne, S. Vandré, C. Preinesberger, S.K. Becker, W. Busse, and T. Kalka, Advances in Solid State Physics 41, 227 (2001).

Ringlike emission profiles in scanning near-field photoluminescence images of single InGaAs quantum dots, M. Geller, I. Manke, K. Hodeck, R. Heitz, and M. Dähne, Physical Review B 64, 233312 (2001).

Hot-electron transport processes in ballistic-electron emission microscopy at Au/Si interfaces, M. Dähne-Prietsch and T. Kalka, Journal of Electron Spectroscopy and Related Phenomena 109, 211 (2000).

1995 - 1999

Flatband conditions observed for lanthanide silicide monolayers on n-type Si(111), S. Vandré, T. Kalka, C. Preinesberger, and M. Dähne-Prietsch, Physical Review Letters 82, 1927 (1999); Erratum, ibid., Physical Review Letters 82, 4370 (1999).

Cross-sectional STM study of InAs quantum dots for laser devices, H. Eisele, O. Flebbe, T. Kalka, and M. Dähne-Prietsch, Surface and Interface Analysis 27, 537 (1999).

SNOM-induced photoluminescence of individual InGaAs quantum dots using etched metal-coated fiber tips, I. Manke, J. Lorbacher, L. Spithoven, F. Heinrichsdorff, and M. Dähne-Prietsch, Surface and Interface Analysis 27, 491 (1999).

Cross-sectional scanning tunneling microscopy of stacked InAs quantum dots, H. Eisele, O. Flebbe, T. Kalka, C. Preinesberger, F. Heinrichsdorff, A. Krost, D. Bimberg, and M. Dähne-Prietsch, Applied Physics Letters 75, 106 (1999).

Epitaxial growth and electronic structure of lanthanide silicides on n-type Si(111), S. Vandré, C. Preinesberger, T. Kalka, and M. Dähne-Prietsch, Journal of Vacuum Science and Technology B 17, 1682 (1999).

Finite linewidth in the photoluminescence of In0.4Ga0.6As quantum dots, J.L. Spithoven, J. Lorbacher, I. Manke, F. Heinrichsdorff, A Krost, D. Bimberg, and M. Dähne-Prietsch, Journal of Vacuum Science and Technology B 17, 1632 (1999).

Atomic structure of stacked InAs quantum dots grown by metal-organic chemical-vapor deposition, O. Flebbe, H. Eisele, T. Kalka, F. Heinrichsdorff, A. Krost, D. Bimberg, and M. Dähne-Prietsch, Journal of Vacuum Science and Technology B 17, 1639 (1999).

The stoichiometry of InAs quantum dots determined by cross-sectional scanning tunneling microscopy, H. Eisele, O. Flebbe, T. Kalka, F. Heinrichsdorff, A. Krost, D. Bimberg, and M. Dähne-Prietsch, Physica Status Solidi (b) 215, 865 (1999).

Growth and electronic structure of Dy silicide on Si(111), S. Vandré, T. Kalka, C. Preinesberger, I. Manke, H. Eisele, M. Dähne-Prietsch, R. Meier, E. Weschke, and G. Kaindl, Applied Surface Science 123/124, 100 (1998).

Photoluminescence of buried InGaAs/GaAs quantum dots spectrally imaged by scanning nearfield optical microscopy, D. Pahlke, I. Manke, F. Heinrichsdorff, M. Dähne-Prietsch, and W. Richter, Applied Surface Science 123/124, 400 (1998).

STM study of epitaxial Dy silicides on Si(111) and Si(001) using ultra-sharp tips prepared by ion bombardment, T. Kalka, C. Preinesberger, S. Vandré, and M. Dähne-Prietsch, Applied Physics A 66, S1073 (1998).

A low-temperature scanning-nearfield optical microscope for photoluminescence at semiconductor structures, I. Manke, D. Pahlke, J. Lorbacher, W. Busse, T. Kalka, W. Richter, and M. Dähne-Prietsch, Applied Physics A 66, S381 (1998).

Formation of dysprosium silicide wires on Si(001), C. Preinesberger, S. Vandré, T. Kalka, and M. Dähne-Prietsch, Journal of Physics D: Applied Physics 31, L43 (1998).

Interface and bulk effects in the attenuation of low-energy electrons through CaF2 thin films, J.E. Ortega, F.J. García de Abajo, P.M. Echenique, I. Manke, T. Kalka, M. Dähne, D. Ochs, S.L. Molodtsov, and A. Rubio,Physical Review B 58, 2233 (1998).

Low density of states at the epitaxial CaF2/Si(111) interface, M. Dähne-Prietsch, I. Manke, T. Kalka, H.J. Wen, and G. Kaindl, Journal of Physics D: Applied Physics 30, L48 (1997).

Ballistic-electron emission microscopy at Au/Si(111): indication of k||-conservation at non-epitaxial interfaces, T. Kalka, M. Dähne-Prietsch, and G. Kaindl, in: The physics of semiconductors, ed. by M. Scheffler and R. Zimmermann, p. 1015 (World Scientific, Singapore, 1996).

Growth and electronic structure of epitaxial interfaces of Dy and Er silicides with Si(111), I. Manke, T. Kalka, M. Dähne-Prietsch, H.J. Wen, and G. Kaindl, in: The physics of semiconductors, ed. by M. Scheffler and R. Zimmermann, p. 1071 (World Scientific, Singapore, 1996).

Ballistic-electron emission microscopy (BEEM): studies of metal/semiconductor interfaces with nanometer resolution, Mario Prietsch, Physics Reports 253, 163 (1995).

p+-doping of Si by Al diffusion upon annealing Al/n-Si(111), H.J. Wen, M. Prietsch, A. Bauer, M.T. Cuberes, I. Manke, and G. Kaindl, Applied Physics Letters 66, 3010 (1995).

Stability of CaF2/Si(111) and Al/CaF2/Si(111) interface systems studied with photoelectron spectroscopy and scanning-tunneling microscopy, H.J. Wen, M. Dähne-Prietsch, A. Bauer, I. Manke, and G. Kaindl, Journal of Vacuum Science and Technology B 13, 1645 (1995).

Formation of the CeSix/Si(111) interface, I. Manke, H.J. Wen, A. Höhr, A. Bauer, M. Dähne-Prietsch, and G. Kaindl, Journal of Vacuum Science and Technology B 13, 1657 (1995).

Thermal annealing of the epitaxial Al/Si(111)7×7 interface: Al clustering, interfacial reaction, and Al-induced p+-doping, H.J. Wen, M. Dähne-Prietsch, A. Bauer, M.T. Cuberes, I. Manke, and G. Kaindl, Journal of Vacuum Science and Technology A 13, 2399 (1995).

Lateral confinement of surface states on stepped Cu(111), O. Sánchez, J.M. García, P. Segovia, J. Alvarez, A.L. Vázquez de Parga, J.E. Ortega, M. Prietsch, and R. Miranda, Physical Review B 52, 7894 (1995).