The group "Optoelectronics and Quantum Devices" deals with the research of low-dimensional semiconductor structures and the development of innovative optoelectronic devices. In addition to important basic research questions, our research activities are also aimed at future-oriented applications in photonic quantum technology, in sensor technology and in novel neuromorphic computer architectures. In the area of university teaching, our focus is on applied semiconductor physics. Here the basics of modern semiconductor devices as well as innovative manufacturing and measurement methods are conveyed.
Our activities rely on III/V-semiconductors and 2D quantum materials based on transition metal dichalcogenides. We fabricate semiconductor heterostructures with nano-engineered optical and electronic properties. These include, for example, microresonators with positioned InGaAs quantum dots and Moiré heterostructures made of 2D materials.
For the nanofabrication of optoelectronic devices such as nanolasers and quantum light sources, we use state-of-the-art nanotechnology methods and the infrastructure of the Nanophotonics Center at the IFKP. This also includes the unique in-situ electron beam lithography for the deterministic fabrication of single-emitter quantum devices.
The developed semiconductor structures and components are characterized using the latest optical and quantum-optical methods. For this purpose, our laboratories are equipped with extensive spectroscopic setups that allow experiments with the highest time and spatial resolution down to the single-emitter and single-photon regime.
