Experimental Physics/Electron- and Ion-Nanooptics

Electron Microscopy on Real-World Structures

Virtual GaN-Substrates

In close collaboration with the IHP in Frankfurt/Oder (working group of Prof. Schroeder) we investigate the atomic structure of virtual GaN substrates on Si(111) over Sc2O3/Y2O3 buffers. Of particular interest are extended defects in the buffer and in the GaN, the interface between Sc2O3 and the GaN, and the resulting polarity of the GaN film [1,2].

[1] Tarnawska et al., J. Appl. Phys. 113 (2013) 213507.
[2] Niermann et al., J. Appl. Phys. 113 (2013) 223501.